MJE13005 02/10/2012 comset semiconductors 1/3 semiconductors silicon power transistors npn power transistors in a to-220 package. they are intended for high voltage, high speed power switching inductive circuits where fall time is critical. they are particularly suited for 115v and 220v switchmode applications such as switching regulator?s, inverters, motor controls, solenoid/relay drivers and deflection circuits compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage 400 v v cbo collector-base voltage 700 v v ebo emitter-base voltage 9 v i c collector current 4 a i cm collector peak current (*) 8 a i b base current 2 a i bm base peak current (*) 4 a i e emitter current 6 a i em emitter peak current (*) 12 a p t power dissipation at case temperature @ t mb < 25 75 w power dissipation at free air temperature 2 t j junction temperature 150 c t s storage temperature range -65 to +150 (*)pulse width = 5ms, duty cycle <10%. thermal characteristics symbol ratings value unit r thjc from junction to case thermal resistance 1.67 c/w r thja from junction to free-air thermal resistance 62.5
MJE13005 02/10/2012 comset semiconductors 2/3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter sustaining voltage (*) i c = 10 ma, i b = 0 400 - - v i cbo collector- cutoff current v cb = 700 v i b = 0 t c = 25c - - 1 ma t c = 100c - - 5 i ebo emitter cutoff current v eb = 9 v, i c = 0 - - 1 ma v ce(sat) collector-emitter saturation voltage (*) i c = 1 a, i b = 200 ma - - 0.5 v i c = 2 a i b = 500 ma t c = 25c - - 0.6 t c = 100c - - 1 i c = 4 a, i b = 1 a - - 1 v be(sat) base-emitter saturation voltage (*) i c = 1 a, i b = 200 ma - - 1.2 v i c = 2 a i b = 500 ma t c = 25c - - 1.6 t c = 100c - - 1.5 h fe forward current transfer ratio (*) v ce = 5.0 v, i c = 1 a 10 - 60 - v ce = 5.0 v, i c = 2 a 8 - 40 f t transition frequency v ce = 10 v, i c = 0.5 a, f= 1 mhz 4 - - mhz c ob output capacitance i e = 0 ; v cb = 10 v ; f= 1 mhz - 65 - pf (*) pulse width 300 s, duty cycle 2.0% switching times. symbol ratings test condition(s) min typ max unit t d delay time v cc = 125 v; i c = 2 a i b1 = -i b2 = 400 ma t p = 25 s, duty cycle <1%. - - 0.1 s t r rise time - - 0.7 t s storage time - - 4 t f fall time - - 0.9 .
MJE13005 02/10/2012 comset semiconductors 3/3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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